www.belling.com.cn v2.0 page1 blm 9435 pb free product p-channel enhancement mode power mosfet description the BLM9435 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 4.5v. this device is suitable for use as a load switch or in pwm applications. general features v ds = -30v,i d = -5.1a r ds(on) < 105m @ v gs =-4.5v r ds(on) < 55m @ v gs =-10v high power and current handing capability lead free product is acquired surface mount package application pwm applications load switch power management d g s schematic diagram marking and pin assignment sop-8 top view package marking and ordering information device marking device device package reel size tape width quantity 9435 BLM9435 sop-8 ?330mm 12mm 2500 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v drain current-continuous i d -5.1 a drain current-pulsed (note 1) i dm -20 a maximum power dissipation p d 2.5 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 50 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -30 -33 - v
www.belling.com.cn v2.0 page2 blm 9435 pb free product zero gate voltage drain current i dss v ds =-24v,v gs =0v - - -1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -1 -1.6 -3 v v gs =-10v, i d =-5.1a - 48 55 m drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-4.2a - 73 105 m forward transconductance g fs v ds =-15v,i d =-4.5a 4 7 - s dynamic characteristics (note4) input capacitance c lss - 1040 - pf output capacitance c oss - 420 - pf reverse transfer capacitance c rss v ds =-15v,v gs =0v, f=1.0mhz - 150 - pf switching characteristics (note 4) turn-on delay time t d(on) - 15 - ns turn-on rise time t r - 13 - ns turn-off delay time t d(off) - 58 - ns turn-off fall time t f v dd =-15v, id=-1a, v gs =-10v,r gen =6 21 - ns total gate charge q g - 12 - nc gate-source charge q gs - 2.2 - nc gate-drain charge q gd v ds =-15v,i d =-5.1a,v gs =-10v - 3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1.7a - - -1.2 v notes: 1. repetitive rating: pulse width limited by maximum j unction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
www.belling.com.cn v2.0 page3 blm 9435 pb free product typical electrical and thermal characteristics figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a)
www.belling.com.cn v2.0 page4 blm 9435 pb free product vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a)
www.belling.com.cn v2.0 page5 blm 9435 pb free product vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impe dance r(t),normalized effective transient thermal impedance i d - drain current (a)
www.belling.com.cn v2.0 page6 blm 9435 pb free product sop-8 package in formation
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